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SNW2016

IEEE SILICON NANOELECTRONICS WORKSHOP 2016

June 12-13, 2016
Honolulu, USA

General Information

The 2016 Silicon Nanoelectronics Workshop is a satellite workshop of the 2016 VLSI Symposium sponsored by the IEEE Electron Device Society. It will be held on June 12-13, 2016 at the Hilton Hawaiian Village in Honolulu, Hawaii USA. This will be the 22nd workshop in the annual series. Original papers on nanometer-scale devices and technologies that utilize silicon or which are based on novel materials on silicon substrates are welcome.

Scope

Nanometer-scale transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanism.
Junction and insulator materials and process technology for nanoelectronic devices.
Techniques for fabrication of nanostructures, including nanometer scale patterning.
Physics of nanoelectronic devices, e.g. quantum effects, non-equilibrium transport.
Modeling and simulation of nanoelectronic devices, e.g. including atomistic effects.
Nanoscale surface, interface, and heterojunction effects in devices.
Device scaling issues including doping fluctuations and atomic granularity.
Circuit design issues and novel circuit architectures, including quantum computing, for nanoelectronic devices.
Optoelectronics using silicon nanostructures.
Techniques targeting zero power electronics (self-supplying), including wireless sensors, energy harvesting, steep slope devices, ultra-low power design and devices.
Devices for 3D and heterogeneous integration on Silicon, including Graphene, III-V devices, CNT, spin-based devices, MEMS and NEMS, etc.
Novel transistors based on two dimensional materials, e.g. MoS₂, WS₂, etc.
Integrated energy harvesting and energy storage based on new material and structures.
Low power integrated sensors for Internet-of-Things.